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Electrical transport properties in ferromagnetic shape memory Ni–Mn–Ga single crystal have been investigated both in experiment and theory by analyzing electrical resistivity along different crystallographic directions during heating. The experimental results show a clear first-order martensitic transformation and a large anisotropic resistivity  AR  of 23.7% at the tetragonal martensitic phase. The theoretical conductivity (σ=1/p), estimated using first-principles calculations combined with classical Boltzman transport theory, proves essential crystallographic anisotropic resistivity (AR=31%) in the martensitic phase and agrees well with experimental results. The AR in the martensitic phase is reveled to mainly originate from the splitting of the minority-spin Ni 3d and Ga 4p states near the Fermi level and hence reconstruction of the minority-spin Fermi surface upon martensitic transformation.Department of Electrical EngineeringDepartment of Applied PhysicsAuthor name used in this publication: Siu Wing OrAuthor name used in this publication: Helen Lai Wa Cha

Anisotropy of the electrical transport properties in a Ni2MnGa single crystal: Experiment and theory