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Fe and Cr doping of liquid‐phase epitaxial In0.53Ga0.47As grown at 650 °C on InP substrates have been investigated. Varying amounts of high‐purity Fe and Cr have been added to the growth melt. The resistivity of Fe‐doped layers increases with increase of Fe added to the melt, and layers with ND−NA as low as 2.0×1012 cm−3 can be grown consistently. From analysis of temperature‐dependent Hall data on conducting Fe‐doped samples, the Fe acceptor ionization energy is found to be 0.46 eV. No additional feature is seen in the 4 K band‐edge photoluminescence spectra of Fe‐doped layers. Cr doping seems to produce donorlike behavior and the electron concentration increases monotonically with increased addition of Cr to the melt. An additional peak, separated from the band‐gap energy by 24 meV is seen in the photoluminescence spectra of Cr‐doped samples. It is believed that Cr itself, or a complex defect involving Cr is responsible for the formation of a donorlike center

Fe and Cr doping of liquid-phase epitaxial In0.53Ga0.47As/InP