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Using the recently developed technique of microsoldering, we perform asystematic transport study of the influence of PMMA on graphene flakesrevealing a doping effect of up to 3.8x10^12 1/cm^2, but a negligible influenceon mobility and gate voltage induced hysteresis. Moreover, we show that themicrosoldered graphene is free of contamination and exhibits a very similarintrinsic rippling as has been found for lithographically contacted flakes.Finally, we demonstrate a current induced closing of the previously foundphonon gap appearing in scanning tunneling spectroscopy experiments, stronglynon-linear features at higher bias probably caused by vibrations of the flakeand a B-field induced double peak attributed to the 0.Landau level of graphene.

Electrical transport and low-temperature scanning tunneling microscopy of microsoldered graphene