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We demonstrate digital tuning of the slow-light regime in siliconphotonic-crystal waveguides by performing atomic layer deposition of hafniumoxide. The high group-index regime was deterministically controlled (red-shiftof 140 +/- 10 pm per atomic layer) without affecting the group-velocitydispersion and third-order dispersion. Additionally, differential tuning of 110+/- 30 pm per monolayer of the slow-light TE-like and TM-like modes wasobserved. This passive post-fabrication process has potential applicationsincluding the tuning of chip-scale optical interconnects, as well as Raman andparametric amplification.

Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition