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We demonstrate the fabrication of graphene nanogap with crystallographicallymatching edges on SiO2Si substrates by divulsion. The current-voltagemeasurement is then performed in a high-vacuum chamber for a graphene nanogapwith few hundred nanometers separation. The parallel edges help to builduniform electrical field and allow us to perform electron emission study onindividual graphene. It was found that current-voltage characteristics aregoverned by the space-charge-limited flow of current at low biases while the FNmodel fits the I-V curves in high voltage regime. We also examinedelectrostatic gating effect of the vacuum electronic device. Graphene nanogapwith atomically parallel edges may open up opportunities for both fundamentaland applied research of vacuum nanoelectronics.

Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties