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We propose and demonstrate wide-band capacitance measurements on asemiconductor double-quantum dot (DQD) to study tunneling dynamics. By applyingphase-tunable high-frequency signals independently to the DQD and a nearbyquantum-point-contact charge detector, we perform on-chip lock-in detection ofthe capacitance associated with the single-electron motion over a widefrequency range from hertz to a few ten gigahertz. Analyzing the phase and thefrequency dependence of the signal allows us to extract the characteristictunneling rates. We show that, by applying this technique to the interdottunnel coupling regime, quantum capacitance reflecting the strength of thequantum-mechanical coupling can be measured.

Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics