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We report on the fabrication and characterization of a few-electron quantumdot controlled by a single gate electrode. Our device has a double-quantum-welldesign, in which the doping controls the occupancy of the lower well while theupper well remains empty under the free surface. A small air-bridged gatecontacts the surface, and is positively biased to draw laterally confinedelectrons into the upper well. Electrons tunneling between thisaccumulation-mode dot and the lower well are detected using a quantum pointcontact (QPC), located slightly offset from the dot gate. The charge state ofthe dot is measured by monitoring the differential transconductance of the QPCnear pinch-off. Addition spectra starting with N=0 were observed as a functionof gate voltage. DC sensitivity to single electrons was determined to be ashigh as 8.6%, resulting in a signal-to-noise ratio of ~9:1 with an equivalentnoise bandwidth of 12.1 kHz. Analysis of random telegraph signals associatedwith the zero to one electron transition allowed a measurement of the lifetimesfor the filled and empty states of the one-electron dot: 0.38 ms and 0.22 ms,respectively, for a device with a 10 nm AlInAs tunnel barrier between the twowells.

Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor