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We report on the observation of inertial-ballistic transport in nanoscalecross junctions fabricated from epitaxial graphene grown on SiC(0001).Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170ohm which is measured in a non-local, four-terminal configuration at 4.2 K andwhich vanishes as the temperature is increased above 80 K.

Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions