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Hydrogenated amorphous carbon (a-C:H) deposited from an Ar-C2H2 expanding thermal plasma chemical vapor deposition (ETP-CVD) is reported. The downstream plasma region of an ETP is characterized by a low electron temperature (∼0.3 eV), which leads to an ion driven chemistry and negligible physical effects, such as ion bombardment (ion energy <2 eV) on the depositing surface. The material properties in ETP-CVD can be controlled by varying the plasma chemistry. In this article we investigate the change in a-C:H material properties by varying the Ar/C2H2 gas flow ratio over a wide range (1.33–150), with emphasis on low gas flow ratios (1.33–5). By changing the Ar/C2H2 gas flow ratio, the gas residence time in the ETP expansion can be tuned, which in turn defines the chemistry of the ETP-CVD. Soft polymerlike a-C:H to moderately hard a-C:H films have been deposited by lowering the Ar/C2H2 gas flow ratio. Recently, under very low Ar/C2H2 gas flow ratios, a hard graphitelike a-C:H material has been deposited. Th...

Hard graphitelike hydrogenated amorphous carbon grown at high rates by a remote plasma