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Magnetic tunnel junctions for spin-transfer torque switching were prepared toinvestigate the dielectric breakdown. The breakdown occurs typically atvoltages not much higher than the switching voltages, a bottleneck for theimplementation of spin-transfer torque Magnetic Random Access Memory. Intactand broken tunnel junctions are characterized by transport measurements andthen prepared for transmission electron microscopy and energy dispersive x-rayspectrometry by focussed ion beam. The comparison to our previous model of theelectric breakdown for thicker MgO tunnel barriers reveals significantdifferences arising from the high current densities.

Electric breakdown in ultra-thin MgO tunnel barrier junctions for spin-transfer torque switching