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In this paper we investigate "Warm Electron Injection" as a mechanism for NORprogramming of double-gate SONOS memories through 2D full band Monte Carlosimulations. Warm electron injection is characterized by an applied VDS smallerthan 3.15 V, so that electrons cannot easily accumulate a kinetic energy largerthan the height of the Si/SiO2 barrier. We perform a time-dependent simulationof the program operation where the local gate current density is computed witha continuum-based method and is adiabatically separated from the 2D full MonteCarlo simulation used for obtaining the electron distribution in the phasespace. In this way we are able to compute the time evolution of the chargestored in the nitride and of the threshold voltages corresponding to forwardand reverse bias. We show that warm electron injection is a viable option forNOR programming in order to reduce power supply, preserve reliability and CMOSlogic level compatibility. In addition, it provides a well localized charge,offering interesting perspectives for multi-level and dual bit operation, evenin devices with negligible short channel effects.

Transient Analysis of Warm Electron Injection Programming of Double Gate SONOS Memories by means of Full Band Monte Carlo Simulation