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We report techniques for the fabrication of multi-zone linear RF Paul trapsthat exploit the machinability and electrical conductivity of degeneratesilicon. The approach was tested by trapping and laser cooling 24Mg+ ions intwo trap geometries: a single-zone two-layer trap and a multi-zonesurface-electrode trap. From the measured ion motional heating rate wedetermine an electric field spectral density at the ion's position ofapproximately 1E-10 (V/m)^2/Hz at a frequency of 1.125 MHz when the ion lies 40micron above the trap surface. One application of these devices is controlledmanipulation of atomic ion qubits, the basis of one form of quantum informationprocessing.

Scalable arrays of RF Paul traps in degenerate Si