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We study theoretically the quantum size effects of a magnetic resonanttunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer onthe spin-tunneling time and the spin polarization of the electrons. The resultsshow that the spin-tunneling times may oscillate and a great difference betweenthe tunneling time of the electrons with opposite spin directions can beobtained depending on the system parameters. We also study the effect ofstructural asymmetry which is related to the difference in the thickness of thenonmagnetic layers. It is found that the structural asymmetry can greatlyaffect the traversal time and the spin polarization of the electrons tunnelingthrough the magnetic RTD. The results indicate that, by choosing suitablevalues for the thickness of the layers, one can design a high speed and perfectspin-filter diode.

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode