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Utilizing three-terminal tunnel emission of ballistic electrons and holes, wehave developed a method to self-consistently measure the bandgap ofsemiconductors and band discontinuities at semiconductor heterojunctionswithout any prerequisite material parameter. Measurements are performed onlattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)0.51In0.49P single-barrierheterostructures. The bandgaps of AlGaAs and AlGaInP are measured with aresolution of several meV at 4.2 K. For the GaAs/AlGaAs interface, the measuredGamma band offset ratio is 60.4:39.6 (+/-2%). For the GaAs/AlGaInP interface,this ratio varies with the Al mole fraction and is distributed more in thevalence band. A non-monotonic Al composition dependence of the conduction bandoffset at the GaAs/AlGaInP interface is observed in the indirect-gap regime.

Bandgap and Band Offsets Determination of Semiconductor Heterostructures using Three-terminal Ballistic Carrier Spectroscopy