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Indium-rich AlInN are grown by metal-organic(MO) chemical vapor deposition usingtrimethylaluminum, trimethylindium, and ammonia. Under the conservation of MO influx, theeffects of gas flow in the MO route on AlInN growth and Al-related parasitic reaction areinvestigated. With an increase in this gas flow, the suppression of Al-related parasitic reaction, i.e.,enhancement in Al content incorporation and improvement of crystalline quality, is satisfactorilyshown until the occurring of severe phase separation. Accordingly, Al content x in AlxIn1−xN can betuned from x=0.02 to 0.26. The Raman spectra of those AlInN samples with phase separation areanalyzed by the resonant excitation effect and two-mode behavior for A1(LO). Finally, we proposea phase diagram to interpret the phase separation and Al content evolution under the influence of gas flow

Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition