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Spin qubits in Silicon quantum dots can have long coherence times, yet theirmanipulation relies on the exchange interaction, through which charge noise caninduce decoherence. Charge traps near the interface of a Si heterostructurelead to fluctuations in the quantum-dot confinement and barrier potentials,which cause gating errors and two-spin dephasing. We quantify these effects inSi double quantum dots using a realistic model of noise. Specifically, weconsider both random telegraph noise from a few traps (good for dots grown onsubmicron wafers) and 1/f noise from many traps (good for larger wafersappropriate for quantum dot arrays). We give estimates of gate errors forsingle-spin qubit architectures and dephasing in singlet-triplet qubits.

Dephasing of Si spin qubits due to charge noise