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We report on a detailed study of the emission of terahertz-frequency electromagnetic radiation from layers of GaBiyAs1−y (0≤y<0.04) grown by molecular beam epitaxy on (311)B and (001) GaAs substrates. We measure two orthogonally polarized components of the terahertz radiation emitted under excitation by ultrashort near-infrared laser pulses in both transmission and reflection geometries as a function of the crystal rotation about its surface normal as well as the effect of in-plane magnetic field and pump fluence on the terahertz emission. We conclude that the principal mechanism for terahertz generation is via optical rectification rather than transient currents.

The role of optical rectification in the generation of terahertz radiation from GaBiAs