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Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantumwells is investigated by applying the magnetic field induced photogalvaniceffect. We demonstrate that the structure inversion asymmetry (SIA) can betailored by variation of the delta-doping layer position. Symmetrically-dopedstructures exhibit a substantial SIA due to impurity segregation during thegrowth process. Tuning the SIA by the delta-doping position we grow sampleswith almost equal degrees of structure and bulk inversion asymmetry.

Tuning of structure inversion asymmetry by the $\delta$-doping position in (001)-grown GaAs quantum wells