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The authors report on the crystallographic orientation dependence of theSchottky properties for heterojunctions between a half-metallic ferromagnetLa$_0.6$Sr$_0.4$MnO$_3$ (LSMO) and Nb-doped SrTiO3 semiconductor. The Schottkybarrier height determined by in situ photoemission measurements is independentfor the substrate orientations (001) and (110), while the magnetic propertiesof LSMO (110) films are more enhanced than for (001) films. These resultssuggest that the performance of magnetic devices based on ferromagneticmanganite is improved by using (110)-oriented substrates.

Orientation dependence of the Schottky barrier height for La$_0.6$Sr$_0.4$MnO$_3$/SrTiO$_3$ heterojunctions