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In this paper we report on the optical properties of site controlled InGaAsdots with GaAs barriers grown in pyramidal recesses by metalorganic vapourphase epitaxy. The inhomogeneous broadening of excitonic emission from anensemble of quantum dots is found to be unusually narrow, with a standarddeviation of 1.19 meV, and spectral purity of emission lines from individualdots is found to be very high (18-30 ueV), in contrast with othersite-controlled systems.

A site-controlled quantum dot system offering both high uniformity and spectral purity