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Injection-type ballistic rectifiers on Si/SiGe are studied with respect tothe influence of gate voltage on the transfer resistance RT (output voltagedivided by input current) for different positions of a local gate electrode.The rectifiers are trifurcated quantum wires with straight voltage stem andoblique current-injecting leads. Depending on the gate configuration,thermopower contributions arise from nearly-pinched stem regions which eithercancel each other or impose upon the ballistic signal with same or oppositepolarity. At best, this enhances RT to a maximum value of 470 Ohm close tothreshold voltage.

Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers