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We demonstrate electrical injection and detection of spin-polarized electronsin silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barriercontacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) nearthe interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance forreverse-bias characteristics of the Fe_3Si/Si Schottky diodes. Using laterallyfabricated four-probe geometries with the modified Fe_3Si/Si contacts, wedetect nonlocal output signals which originate from the spin accumulation in aSi channel at low temperatures.

Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier