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Cobalt silicide (CoSi2) islands have been formed by the deposition of thinfilms (~0.1 to 0.3 nm) of cobalt on clean Si(111) and Si(100) substrates inultrahigh vacuum (UHV) followed by annealing to ~880 degrees C. Conductingatomic force microscopy has been performed on these islands to characterize andmeasure their current-voltage (I-V) characteristics. Current-voltage curveswere analyzed using thermionic emission theory to obtain the Schottky barrierheights and ideality factors between the silicide islands and the siliconsubstrates. Current-voltage measurements were performed ex situ for samples("passivated surfaces") where the silicon surface surrounding the islands waspassivated with a native oxide. Other samples ("clean surfaces") remained inUHV while I-V curves were recorded. By comparing barrier heights and idealityfactors for islands on both surfaces, the effects of the non-passivatedsurfaces on conduction were studied. The clean surface barrier heights werefound to be ~0.2 to 0.3 eV below barrier heights measured from similar islandson passivated surfaces. The reduced Schottky barrier is mainly attributed toFermi level pinning by non-passivated surface states of the clean siliconsurface. However, the measured barrier heights of the clean surface islands areequivalent on both Si(111) and Si(100), suggesting that the non-passivatedsurfaces are influenced by cobalt impurities. Furthermore, the barrier heightsof islands on the clean surfaces are lower than due to Fermi level pinningalone and the additional barrier height lowering is primarily attributed tospreading resistance effects. Schottky barrier inhomogeneity may also causeadditional barrier height lowering and non-ideality in the contacts. The cleansurface barrier heights decreased and the ideality factors increased withdecreasing temperature, which is attributed to the temperature variation of theFermi level.

Conducting Atomic Force Microscopy Studies of Nanoscale Cobalt Silicide Schottky Barriers on Si(111) and Si(100)