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We report pulsed as well as direct current/voltage induced electroresistancein Bi0.8Sr0.2MnO3 at room temperature. It is shown that bi-level andmulti-level resistivity switching can be induced by a sequence of pulses ofvarying pulse width at fixed voltage amplitude. Resistivity increases abruptly(= 55 % at 300 K) upon reducing pulse width from 100 ms to 25 ms for a fixedelectric field (E = 2 V/cm2) of 200 ms pulse period. The resistivity switchingis accompanied by a periodic change in temperature which alone can not explainthe magnitude of the resistivity change.

Pulse width controlled resistivity switching at room temperature in Bi0.8Sr0.2MnO3