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Although reliable models may predict the detection efficiency ofsemiconductor detectors, measurements are needed to check the parameterssupplied by the manufacturers namely the thicknesses of dead layer, berylliumwindow and crystal active area. The efficiency of three silicon detectors hasbeen precisely investigated in their entire photon energy range of detection.In the 0 to a few keV range, we have developed a new method based on thedetection of the 2E1 decay of the metastable Ar17+ 2s -> 1s transition. Verygood theoretical knowledge of the energetic distribution of the 2E1 decay modeenables precise characterization of the absorbing layers in front of thedetectors. In the high-energy range (> 10 keV), the detector crystal thicknessplays a major role in the detection efficiency and has been determined using a241Am source.

2E1 Ar17+ decay and conventional radioactive sources to determine efficiency of semiconductor detectors