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Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrodeand conducting non-metal substrate were fabricated by dry and wet etchingmethods. Both structures exhibit similar voltage-controlled memory behaviors,in which short voltage pulses (1 $\mu$s) can switch the devices between high-and low-impedance states. Through the comparison of current-voltagecharacteristics in structures made by different methods, filamentary conductionat the etched oxide edges is most consistent with the results, providinginsights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratiosof over 10$^{4}$ were demonstrated.

Etching-dependent reproducible memory switching in vertical SiO2 structures