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A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), whichcombines a Schottky-barrier MOSFET with ferromagnetic source and draincontacts, is a promising device for spintronic logic. Previous simulationstudies predict that this device should display a very high magnetoresistance(MR) ratio (between the cases of parallel and anti-parallel magnetizations) forthe case of half-metal ferromagnets (HMF). We use the non-equilibrium Green'sfunction (NEGF) formalism to describe tunneling and carrier transport in thisdevice and to incorporate spin relaxation at the HMF-semiconductor interfaces.Spin relaxation at interfaces results in non-ideal spin injection. Minorityspin currents arise and dominate the leakage current for anti-parallelmagnetizations. This reduces the MR ratio and sets a practical limit for spinMOSFET performance. We found that MR saturates at a lower value for smallersource-to-drain bias. In addition, spin relaxation at the detector side isfound to be more detrimental to MR than that at the injector side, for drainbias less than the energy difference of the minority spin edge and the Fermilevel.

Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation