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It was experimentally found that the evolution of dielectric loss withprocessing temperature displays a common trend in ferroelectric and dielectricthin oxide films: firstly an increase and then a decrease in dielectric losswhen the processing temperature is gradually raised. Such a dielectric responseof ferroelectric/dielectric thin films has been theoretically addressed in thiswork. We propose that at the initial stage of the crystallization process inthin films, the transformation from amorphous to crystalline phase shouldincrease substantially the dielectric loss; then, with further increase in theprocessing temperature, the coalescent growth of small crystalline grains intobig ones could be helpful in reducing the dielectric loss by lowering grainboundary densities. The obtained experimental data for (Ba,Sr)TiO3 thin filmswith 500 nm in thickness were analyzed in terms of the model developed andshown to be in a reasonable agreement with the theoretical results.

Modeling of the evolution of dielectric loss with processing temperature in ferroelectric and dielectric thin oxide films