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To develop silicon-based spintronic devices, we have explored high-qualityferromagnetic Fe$_{3}$Si/silicon (Si) structures. Using low-temperaturemolecular beam epitaxy at 130 $^circ$C, we realize epitaxial growth offerromagnetic Fe$_{3}$Si layers on Si (111) with keeping an abrupt interface,and the grown Fe$_{3}$Si layer has the ordered $DO_{3}$ phase. Measurements ofmagnetic and electrical properties for the Fe$_{3}$Si/Si(111) yield a magneticmoment of ~ 3.16 $mu_{B}$/f.u. at room temperature and a rectifyingSchottky-diode behavior with the ideality factor of ~ 1.08, respectively.

Epitaxial ferromagnetic Fe$_{3}$Si/Si(111) structures with high-quality hetero-interfaces