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Energy exchanges due to chemical reactions between a silicon surface and aSF6 plasma were directly measured using a heat flux microsensor (HFM). Theenergy flux evolution was compared with those obtained when only few reactionsoccur at the surface to show the part of chemical reactions. At 800 W, themeasured energy flux due to chemical reactions is estimated at about 7W.cm\^{-2} against 0.4 W.cm\^{-2} for ion bombardment and other contributions.Time evolution of the HFM signal is also studied. The molar enthalpy of thereaction giving SiF4 molecules was evaluated and is consistent with valuesgiven in literature.

Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma