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The sputtering of hexagonal boron nitride due to low energy xenon ionbombardments occurs in various applications including fabrication of cubicboron nitride and erosion of Hall thruster channel walls. At low ion energies,accurate experimental characterization of sputter yields increases indifficulty due to the low yields involved. A molecular dynamics model isemployed to simulate the sputtering process and to calculate sputter yields forion energies ranging from 10 eV to 350 eV. The results are compared toexperimental data and a semi-empirical expression developed by Bohdansky isfound to adequately describe the simulation data. Surface temperature effectsare also investigated, and the sputter yield at 850 K is approximately twicethat at 423 K.

Modeling low energy sputtering of hexagonal boron nitride by xenon ions