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Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality resonant tunneling diodes. A single photon detection efficiency of 2.1%±0.1% at 685 nm was measured corresponding to an internal quantum efficiency of 14%. The devices are simple to fabricate, robust, and show promise for large absorption area single photon detectors based on quantum dot structures.

Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area