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We develop a broadly applicable transport-based technique, gate modulated activation energy spectroscopy (GAMEaS), for determining the density of states (DOS) in an energy gap. GAMEaS is applied to field-effect transistors (FETs) made from different single crystal oligomer semiconductors. We find that there are two distinct types of band tails, deep and shallow, depending on the crystallization process. The exponential band tails of the localized DOS are characterized by their slope with the highest mobility FETs having a value of 29 eV−1 close to 1/kBT at 300 K.

Dependence of mobility on density of gap states in organics by GAMEaS-gate modulated activation energy spectroscopy