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Whispering Gallery modes in bulk cylindrical Gallium Arsenide and GalliumPhosphide samples have been examined both in darkness and under white light at50 K. In both samples we observed change in permittivity under light and darkconditions. This results from a change in the polarization state of thesemiconductor, which is consistent with a free electron-holecreation/recombination process. The permittivity of the semiconductor ismodified by free photocarriers in the surface layers of the sample which is theregion sampled by Whispering Gallery modes.

Modified permittivity observed in bulk Gallium Arsenide and Gallium Phosphide samples at 50 K using the Whispering Gallery mode method