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Carrier lifetimes and tellurium inclusion densities in detector grade cadmium zinc telluride crystals grown by the high pressure Bridgman method were optically measured using pulsed laser microwave cavity perturbation and infrared microscopy. Excess carriers were produced in the material using a pulsed laser with a wavelength of 1064 nm and pulse width of 7 ns, and the electronic decay was measured at room temperature. Spatial mapping of lifetimes and defect densities in cadmium zinc telluride was performed to determine the relationship between tellurium defect density and trapping. A strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time.

Correlation of tellurium inclusions and carrier lifetime in detector grade cadmium zinc telluride