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Vitreous SiO2 thin films thermally grown onto Si wafers were bombarded by Au ions with energies from 0.005 to 11.1 MeV/u and by ions at constant velocity (0.1 MeV/u A197u, T130e, A75s, S32, and F19). Subsequent chemical etching produced conical holes in the films with apertures from a few tens to ∼150 nm. The diameter and the cone angle of the holes were determined as a function of energy loss of the ions. Preferential track etching requires a critical electronic stopping power Seth∼2 keV/nm, independent of the value of the nuclear stopping. However, homogeneous etching, characterized by small cone opening angles and narrow distributions of pore sizes and associated with a continuous trail of critical damage, is only reached for Se>4 keV/nm. The evolution of the etched-track dimensions as a function of specific energy (or electronic stopping force) can be described by the inelastic thermal spike model, assuming that the etchable track results from the quenching of a zone which contains sufficient energy f...

Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability