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Dependency of energy bandgap (Eg) of bilayer armchair graphene nanoribbons(AGNRB) on their widths, interlayer distance (D) and edge doping concentrationof boron/nitrogen is investigated using local density approximation and compareto the results of monolayer graphene nanoribbons (AGNRM). Although Eg of AGNRB,in general, is smaller than that of AGNRM, AGNRB exhibits two distinct groups,metal and semiconductor, while AGNRM displays purely semiconducting behavior.Eg of AGNRB, moreover, is highly sensitive to D, indicating a possibleapplication in tuning Eg by varying D. Finally, edge doping of both AGNRsystems reduces Eg by 11-17%/4-10% for AGNRM/AGNRB, respectively.

An Ab Initio Study on Energy Gap of Bilayer Graphene Nanoribbons with Armchair Edges