English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

The stacking faults (SFs) in 4H-SiC epilayers have been characterized by microphotoluminescence spectroscopy and photoluminescence (PL) intensity mapping at room temperature. Three kinds of SFs, intrinsic Frank SFs, double Shockley SFs, and in-grown SFs, have been identified in the samples. Each kind of SF shows the distinct PL emission located at 420, 500, and 455nm, respectively. The shapes and distributions of SFs have been profiled by micro-PL intensity mapping. The formation mechanisms of each SF are also discussed.

Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping