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Impedance measurements have been performed on a sintered polycrystallinesample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivityoften is measured in this class of semiconducting materials as a result ofextrinsic factors. Our results show that a large offset in the capacitance,measured on a series of samples with different thickness, is due to theinterfacial polarization. This contribution then can be removed from the data,creating a general procedure for dielectric measurements in semiconductingsamples.

Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6