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The complete control of the electron occupation of a single InGaAs dot is shown to produce highly\udantibunched single photon emission with nonresonant optical excitation. Intensity correlation\udmeasurements show g\ud 2 \ud 0  values of 3%  50%  at low  high  excitation power. A distinct double\udpeak structure is shown at time zero, demonstrating that although two photons may be emitted per\udexcitation pulse, they are not simultaneously emitted. We interpret this feature as a hole recapture\udprocess from the wetting layer into the dot after initial recombination. The recapture dynamics is\udshown to be adjustable through engineering the valence potential.Peer reviewe

Hole recapture limited single photon generation from a single n-type charge-tunable quantum dot