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We propose a simple analytical model of a metal-oxide-semiconductorfield-effect transistor with a lateral resonant gate based on the coupledelectromechanical equations, which are self-consistently solved in time. Allcharge densities according to the mechanical oscillations are evaluated. Theonly input parameters are the physical characteristics of the device. No extramathematical parameters are used to fit the experimental results. Theoreticalresults are in good agreement with the experimental data in static and dynamicoperation. Our model is comprehensive and may be suitable for anyelectromechanical device based on the field-effect transduction.

applied physics letters

Compact and explicit physical model for lateral  metal-oxide-semiconductor field-effect transistor with nanoelectromechanical  system based resonant gate