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A structured film formed by an active Er3+-doped amorphous Al2O3 layer located between two amorphous silicon nanolayers (NLs) in as-grown conditions shows an enhancement of the photoluminescence (PL) intensity and lifetime at 1.53 μm of one order of magnitude when compared to a similar Er3+-doped film without silicon NLs. The film can be pumped even under nonresonant excitation conditions as a result of a long range energy transfer from the a-Si NLs to the Er3+ ions. In addition, the PL shows a single exponential decay with a lifetime value as high as 2.4 ms. The lifetime enhancement is associated with an improvement of the emission efficiency of the Er3+ ions. © 2008 American Institute of PhysicsPeer Reviewe

a - Si nanolayer induced enhancement of the 1.53μm photoluminescence in Er3+ doped a-Al2O3 thin films