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Molecular-beam epitaxy of Al1-x Inx N alloys with different indium (In) contents, x, were studied by in situ reflection high-energy electron diffraction (RHEED). Growth rates of the alloys were measured by the RHEED intensity oscillations for different source flux conditions, while the lattice parameters were derived from the diffraction patterns. It was found that under the excess nitrogen growth regime, incorporation of aluminum was complete whereas incorporation of In atoms was incomplete even at temperatures below 400 °C. © 2008 American Institute of Physics.published_or_final_versio

A study of Al1−xInxN growth by reflection high-energy electron diffraction—incorporation of cation atoms during molecular-beam epitaxy