English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Deep ultraviolet photoluminescence (PL) was employed to probe the valence band structure of AlN epilayers grown by metal organic chemical vapor deposition on c-plane sapphire substrates. At 10K, in addition to the dominant emission peak at 6.050eV polarized in the E∥c direction, we observed two additional emission peaks at 6.249 and 6.262eV polarized in the E⊥c direction. These two emission lines are assigned to the recombination of free excitons related to the B and C valence bands. A more comprehensive picture of the valence band structure of AlN is thus directly obtained from the PL measurements.

Valence band structure of AlN probed by photoluminescence