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We describe here the characteristics of two types of high-quality PbTep-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas(TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) andZn (Zn-IJ). The results, as presented here, demonstrate the high quality ofthese PbTe diodes. Capacitance-voltage and current-voltage characteristics havebeen measured. The measurements were carried out over a temperature range from~ 10 K to ~ 180 K. The latter was the highest temperature, where the diodestill demonstrated rectifying properties. This maximum operating temperature ishigher than any of the earlier reported results.  The saturation current density, J0, in both diode types, was ~ 10^-5 A/cm2 at80 K, while at 180 K J0 ~ 10^-1 A/cm2 in TDJ and ~ 1 A/cm2 in bothion-implanted junctions. At 80 K the reverse current started to increasemarkedly at a bias of ~ 400 mV for TDJ, and at ~550 mV for IJ. The idealityfactor n was about 1.5-2 for both diode types at 80 K. The analysis of the C-Vplots shows that the junctions in both diode types are linearly graded. Theanalysis of the C-V plots allows also determining the height of the junctionbarrier, the concentrations and the concentration gradient of the impurities,and the temperature dependence of the static dielectric constant. Thezero-bias-resistance x area products (R0Ae) at 80 K are: 850 OHMcm2 for TDJ,250 OHMcm2 for In-IJ, and ~ 80 OHMcm2 for Zn-IJ, while at 180 K R0Ae ~ 0.38OHMcm2 for TDJ, and ~ 0.1 OHMcm2 for IJ. The estimated detectivity is: D* ~10^10 cmHz^(1/2)/W up to T=140 K, determined mainly by background radiation,while at T=180 K, D* decreases to 108-107 cmHz^(1/2)/W, and is determined bythe Johnson noise.

Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation