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We present an approach for the highly sensitive photon detection based on thequantum dots (QDs) operating at temperature of 77K. The detection structure isbased on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combinedwith a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photonsper second had induced 10nA photocurrent in this structure, corresponding tothe photo-excited carrier multiplication factor of 10^7. This highmultiplication factor is achieved by the quantum dot induced memory effect andthe resonant tunneling tuning effect of QD-RTD structure.

High photo-excited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode