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In the past decade, room temperature ferromagnetism was often observed intransition metal doped semiconductors, which were claimed as diluted magneticsemiconductors (DMS). Nowadays intensive activities are devoted to clarifywether the observed ferromagnetism stems from carrier mediated magneticimpurities, ferromagnetic precipitates, or spinodal decomposition. In thispaper, we have correlated the structural and magnetic properties of transitionmetal doped ZnO, TiO2, and Si, prepared by ion implantation. Crystallineprecipitates, i.e., transition metal (Co, Ni) and Mn-silicide nanocrystals, areresponsible for the magnetism. Additionally due to their orientation naturewith respect to the host, these nanocrystals in some cases are not detectableby conventional x-ray diffraction (XRD). This nature results in the pitfall ofusing XRD to exclude magnetic precipitates in DMS materials.

Using x-ray diffraction to identify precipitates in transition metal doped semiconductors