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Using first-principle electronic structure calculations, we show a metal-semiconductor transition of a metallic graphene nanoribbon with zigzag edgesinduced by substitutional doping of Nitrogen or Boron atoms at the edges. Afield effect transistor consisting of a metal-semiconductor-metal junction canthen be constructed by selective doping of the ribbon edges. Thecurrent-voltage characteristics of such a prototype device is determined by thefirst-principle quantum transport calculations.

Making a field effect transistor on a single graphene nanoribbon by selective doping