English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We report the detection of single ion impacts through monitoring of changesin the source-drain currents of field effect transistors (FET) at roomtemperature. Implant apertures are formed in the interlayer dielectrics andgate electrodes of planar, micro-scale FETs by electron beam assisted etching.FET currents increase due to the generation of positively charged defects ingate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channelregions. Implant damage is repaired by rapid thermal annealing, enablingiterative cycles of device doping and electrical characterization fordevelopment of single atom devices and studies of dopant fluctuation effects.

Detection of low energy single ion impacts in micron scale transistors at room temperature