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We observe a strong reduction of the field induced thin film surfaceresistance measured at high microwave frequency ($\nu=$47.7 GHz) inYBa$_{2}$Cu$_{3}$O$_{7-\delta}$ thin films grown on SrTiO$_3$ substrates, as aconsequence of the introduction of sub-micrometric BaZrO$_3$ particles. Thefield increase of the surface resistance is smaller by a factor of $\sim$3 inthe film with BaZrO$_3$ inclusions, while the zero-field properties are notmuch affected. Combining surface resistance and surface reactance data weconclude (a) that BaZrO$_3$ inclusions determine very deep and steep pinningwells and (b) that the pinning changes nature with respect to the pure film.

Strong reduction of field-dependent microwave surface resistance in YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ with sub-micrometric BaZrO$_3$ inclusions